Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

Author

Injun Hwang ; Jongseob Kim ; Soogine Chong ; Hyun-Sik Choi ; Sun-Kyu Hwang ; Jaejoon Oh ; Jai Kwang Shin ; U-In Chung

Author_Institution

Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea

Volume

34

Issue

12

fYear

2013

fDate

Dec. 2013

Firstpage

1494

Lastpage

1496

Abstract

This letter studies the current collapse phenomenon during switching in p-GaN gate AlGaN/GaN high-electron-mobility transistors. It is found that channel hot electrons play a major role in increasing the current collapse and that adding a field plate significantly reduces the effect. By stressing the device with OFF-state pulses of 100 μs× 10 μs with a VGS rise/fall time of 10 ns at Vdc 400 V, compared to the ON-resistance before stress, the ON-resistance was 78 times larger after stress without field plates. With a field plate, it was only 1.8 times larger.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; hot carriers; wide band gap semiconductors; AlGaN-GaN; HEMT; OFF-state pulses; channel hot electrons; current collapse; high-electron-mobility transistors; p-GaN gate; voltage 400 V; Aluminum gallium nitride; Current measurement; Gallium nitride; Gate leakage; HEMTs; MODFETs; Stress; Current collapse; dynamic ON-resistance; electron trap; field plate; hot electron; p-GaN gate high-electron-mobility transistor (HEMT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2286173

Filename

6650086