Title :
Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs
Author :
Injun Hwang ; Jongseob Kim ; Soogine Chong ; Hyun-Sik Choi ; Sun-Kyu Hwang ; Jaejoon Oh ; Jai Kwang Shin ; U-In Chung
Author_Institution :
Samsung Adv. Inst. of Technol., Samsung Electron. Co., Ltd., Yongin, South Korea
Abstract :
This letter studies the current collapse phenomenon during switching in p-GaN gate AlGaN/GaN high-electron-mobility transistors. It is found that channel hot electrons play a major role in increasing the current collapse and that adding a field plate significantly reduces the effect. By stressing the device with OFF-state pulses of 100 μs× 10 μs with a VGS rise/fall time of 10 ns at Vdc 400 V, compared to the ON-resistance before stress, the ON-resistance was 78 times larger after stress without field plates. With a field plate, it was only 1.8 times larger.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; hot carriers; wide band gap semiconductors; AlGaN-GaN; HEMT; OFF-state pulses; channel hot electrons; current collapse; high-electron-mobility transistors; p-GaN gate; voltage 400 V; Aluminum gallium nitride; Current measurement; Gallium nitride; Gate leakage; HEMTs; MODFETs; Stress; Current collapse; dynamic ON-resistance; electron trap; field plate; hot electron; p-GaN gate high-electron-mobility transistor (HEMT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2286173
