Low-power sub-1-V compact bandgap reference for passive RFID tags

Author

Hualei Zhang ; Zhibin Xiao ; Xi Tan ; Hao Min

Author_Institution

State Key Lab. of ASIC & Syst., Fudan Univ., Shanghai, China

Volume

51

Issue

11

fYear

2015

fDate

5 28 2015

Firstpage

815

Lastpage

816

Abstract

A sub-1-V bandgap used for passive radio-frequency identification (RFID) tags is presented. The bandgap circuit needs to work under a low supply voltage in the power starving application environment. In the literature, there are lots of low-voltage structures with large current to realise high performance. However, they are not suitable for low-cost RFID tags, so a low-power sub-1-V bandgap is realised. First, the basic structure of the proposed compact low-voltage supply low-power bandgap reference is shown. Secondly, a circuit analysis is presented and some detail considerations in the design processing are given. Finally, the chip is fabricated in a 0.13 μm mixed signal CMOS process. This low-power sub-1-V bandgap can work well at 0.85 V and at only needs 2.5 μA current at the 1.2 V supply voltage.

Keywords

CMOS integrated circuits; energy gap; low-power electronics; mixed analogue-digital integrated circuits; radiofrequency identification; bandgap circuit; circuit analysis; current 2.5 muA; low-cost RFID tags; low-supply voltage; low-voltage low-power compact bandgap reference; low-voltage structures; mixed signal CMOS process; passive RFID tags; passive radiofrequency identification tags; power starving application environment; size 0.13 mum; voltage 0.85 V; voltage 1 V; voltage 1.2 V;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.4521

Filename

7110792