Title :
Carrier multiplication in a single semiconductor nanocrystal
Author :
Fengrui Hu ; Bihu Lv ; Chunfeng Zhang ; Xiaoyong Wang ; Min Xiao
Author_Institution :
Nat. Lab. of Solid State Microstructures & Sch. of Phys., Nanjing Univ., Nanjing, China
Abstract :
The UV-excited photoluminescence was measured for single CdSe nanocrystals and an average carrier multiplication efficiency of ~13.1% was obtained when the excitation photon energy was set at ~2.46 times of the nanocrystal energy gap.
Keywords :
II-VI semiconductors; cadmium compounds; nanostructured materials; photoluminescence; wide band gap semiconductors; CdSe; UV-excited photoluminescence; carrier multiplication efficiency; excitation photon energy; nanocrystal energy gap; single semiconductor nanocrystal; Adaptive optics; Cadmium compounds; Excitons; II-VI semiconductor materials; Nanocrystals; Photonics; Trajectory;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
