DocumentCode :
732927
Title :
Room temperature continuous wave blue lasing in high quality factor III-nitride nanobeam cavity on silicon
Author :
Trivino, Noelia Vico ; Butte, Raphael ; Carlin, Jean-Francois ; Grandjean, Nicolas
Author_Institution :
Inst. of Condensed Matter Phys., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
Lasing is demonstrated in III-nitride photonic crystal nanobeam cavities grown on silicon. Laser characteristics are well accounted for by the large spontaneous emission coupling factor inherent to nanobeams and the InGaN quantum well material gain.
Keywords :
III-V semiconductors; Q-factor; gallium compounds; indium compounds; laser beams; laser cavity resonators; nanophotonics; photonic crystals; quantum well lasers; spontaneous emission; wide band gap semiconductors; III-nitride photonic crystal nanobeam cavity; InGaN; Si; high quality factor III-nitride nanobeam cavity; laser characteristics; quantum well material gain; room temperature continuous wave blue lasing; spontaneous emission coupling factor; temperature 293 K to 298 K; Cavity resonators; Lasers; Nanostructures; Photonic crystals; Q-factor; Silicon; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183364
Link To Document :
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