DocumentCode
732927
Title
Room temperature continuous wave blue lasing in high quality factor III-nitride nanobeam cavity on silicon
Author
Trivino, Noelia Vico ; Butte, Raphael ; Carlin, Jean-Francois ; Grandjean, Nicolas
Author_Institution
Inst. of Condensed Matter Phys., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
Lasing is demonstrated in III-nitride photonic crystal nanobeam cavities grown on silicon. Laser characteristics are well accounted for by the large spontaneous emission coupling factor inherent to nanobeams and the InGaN quantum well material gain.
Keywords
III-V semiconductors; Q-factor; gallium compounds; indium compounds; laser beams; laser cavity resonators; nanophotonics; photonic crystals; quantum well lasers; spontaneous emission; wide band gap semiconductors; III-nitride photonic crystal nanobeam cavity; InGaN; Si; high quality factor III-nitride nanobeam cavity; laser characteristics; quantum well material gain; room temperature continuous wave blue lasing; spontaneous emission coupling factor; temperature 293 K to 298 K; Cavity resonators; Lasers; Nanostructures; Photonic crystals; Q-factor; Silicon; Spontaneous emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183364
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