DocumentCode :
732973
Title :
Power scaling of femtosecond Ti:Sapphire laser double-side-pumped by high-power green InGaN diode lasers
Author :
Sawada, Ryota ; Tanaka, Hiroki ; Kariyama, Ryosuke ; Hirosawa, Kenichi ; Kannari, Fumihiko
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate a mode-locked Ti:sapphire laser pumped by high-power green InGaN diode lasers from both sides of the crystal and achieved a highest laser power of 50 mW.
Keywords :
III-V semiconductors; gallium compounds; high-speed optical techniques; indium compounds; laser mode locking; optical pumping; sapphire; solid lasers; titanium; wide band gap semiconductors; Al2O3:Ti; InGaN; double-side-pumping; femtosecond Ti:sapphire laser; high-power green InGaN diode lasers; laser power; mode-locked Ti:sapphire laser; power 50 mW; power scaling; Absorption; Cavity resonators; Crystals; Diode lasers; Laser beams; Laser excitation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183410
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=732973
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