• DocumentCode
    732978
  • Title

    The effect on dot gain behaviour of confining layer composition in InP/(Al)GaInP quantum dot lasers

  • Author

    Smith, M. ; Elliott, S.N. ; Kasim, M. ; Smowton, P.M. ; Krysa, A.B.

  • Author_Institution
    Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Reductions in non-radiative recombination and αi with increasing Ga composition of the upper-confining-layer in InP self-assembled quantum-dot lasers reduce threshold-current-density and temperature dependence. Carrier population of 2-D layers limits further improvement at higher Ga compositions.
  • Keywords
    III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; laser beams; quantum dot lasers; self-assembly; InP-AlGaInP; carrier population; confining layer composition; dot gain behaviour; nonradiative recombination; self-assembled quantum-dot lasers; temperature dependence; threshold-current-density; upper-confining-layer; III-V semiconductor materials; Indium phosphide; Quantum dot lasers; Quantum dots; Temperature dependence; Temperature measurement; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183415
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=732978