Title :
Growth and electroluminescent property of multi-facet InGaN/GaN multiple quantum well light emitting device
Author :
Yun-Jing Li ; Shih-Pang Chang ; Yuh-Jen Cheng ; Hao-Chung Kuo ; Chun-Yen Chang
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report the study of InGaN/GaN multiple quantum wells (MQWs) grown on multi-facet microrods. The multi-facet MQWs have broad emission spectrum. Electrical injection was demonstrated with emission color ranged from red to blue.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting devices; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; broad emission spectrum; electrical injection; electroluminescent property; emission color; multifacet microrods; multifacet multiple quantum well light emitting device; Fabrication; Gallium nitride; Light emitting diodes; Lighting; Quantum well devices; Substrates; Three-dimensional displays;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
