DocumentCode
732992
Title
Growth and electroluminescent property of multi-facet InGaN/GaN multiple quantum well light emitting device
Author
Yun-Jing Li ; Shih-Pang Chang ; Yuh-Jen Cheng ; Hao-Chung Kuo ; Chun-Yen Chang
Author_Institution
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We report the study of InGaN/GaN multiple quantum wells (MQWs) grown on multi-facet microrods. The multi-facet MQWs have broad emission spectrum. Electrical injection was demonstrated with emission color ranged from red to blue.
Keywords
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting devices; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; broad emission spectrum; electrical injection; electroluminescent property; emission color; multifacet microrods; multifacet multiple quantum well light emitting device; Fabrication; Gallium nitride; Light emitting diodes; Lighting; Quantum well devices; Substrates; Three-dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183429
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