Title :
Strain relaxation in InGaN/GaN multiple-quantum wells by nano-patterned sapphire substrates with smaller period
Author :
Po-Hsun Chen ; Su, Vin-Cent ; Ming-Lun Lee ; Han-Bo Yang ; Yao-Hong You ; Yen-Pu Chen ; Zheng-Hung Hung ; Ta-Cheng Hsu ; Yu-Yao Lin ; Ray-Ming Lin ; Chieh-Hsiung Kuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
The growth of InGaN-based light-emitting diodes (LEDs) on dry-etched patterned sapphire substrates (DPSSs) with nano-sized periods can relax the residual compressive strain in InGaN/GaN multiple-quantum wells (MQWs), given that the stronger the light emitted.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optoelectronics; light emitting diodes; nanopatterning; sapphire; semiconductor quantum wells; Al2O3; DPSS; InGaN-GaN-Al2O3; LED; MQW; dry-etched patterned sapphire substrates; light emitting diodes; multiple quantum wells; nanopatterned sapphire substrates; nanosized periods; residual compressive strain; strain relaxation; Cascading style sheets; Gallium nitride; Light emitting diodes; Quantum well devices; Simulation; Strain; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
