DocumentCode
733115
Title
Photodetector based on lateral graphene p-n junction created by electron-beam irradiation
Author
Xuechao Yu ; Qi Jie Wang
Author_Institution
Photonics Centre of Excellence, Nanyang Technol. Univ., Singapore, Singapore
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
Graphene p-n junctions fabricated by electron irradiation method that induces n-type doping in the intrinsic p-type graphene are demonstrated. Photoresponse was obtained because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential.
Keywords
electron beams; graphene; optical fabrication; p-n junctions; photodetectors; photoexcitation; C; electron-beam irradiation; lateral graphene p-n junction fabrication; photodetector; photoexcited electron-hole pairs; photoresponse; Electric potential; Field effect transistors; Graphene; P-n junctions; Photoconductivity; Photodetectors; Radiation effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183552
Link To Document