• DocumentCode
    733119
  • Title

    High-index-contrast grating mirrors implemented on the polysilicon gates of a standard bulk CMOS process

  • Author

    Yung-Jr Hung ; Ming-Chun Hsieh

  • Author_Institution
    Dept. of Photonics, Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    High-index-contrast grating implemented in bulk CMOS can provide 95% surface reflectivity with 50 nm bandwidth for TE polarization. Higher reflectivity is achievable by creating air cavities beneath HCGs to avoid the optical leakage to the substrate.
  • Keywords
    CMOS integrated circuits; diffraction gratings; elemental semiconductors; integrated optics; light polarisation; mirrors; reflectivity; refractive index; silicon; Si; TE polarization; air cavities; bulk CMOS process; high-index-contrast grating mirrors; polysilicon gates; surface reflectivity; wavelength 50 nm; Electron optics; Optimized production technology; Photonics; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183556
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733119