• DocumentCode
    733198
  • Title

    Exciton states in InGaN nano-disks in GaN nanowires revealed using nonlinear laser spectroscopy

  • Author

    Nelson, C.R. ; Liu, A. ; Deshpande, S. ; Jahangir, S. ; Bhattacharya, P.K. ; Steel, D.G.

  • Author_Institution
    EECS Dept., Univ. of Michigan, Ann Arbor, MI, USA
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Linear and coherent non-linear resonant high resolution laser spectroscopy was used to characterize In0.54Ga0.46N disks in nanowires. Nonlinear optical spectroscopy and PLE reveal narrow excitonic resonances and evidence of coupling between separate excited states.
  • Keywords
    III-V semiconductors; excited states; excitons; gallium compounds; indium compounds; nanophotonics; nanowires; nonlinear optics; photoluminescence; wide band gap semiconductors; In0.54Ga0.46N-GaN; exciton states; excitonic resonances; nano-disks; nanowires; nonlinear laser spectroscopy; nonlinear optical spectroscopy; photoluminescence excitation; Excitons; Gallium nitride; Laser excitation; Nanowires; Nonlinear optics; Probes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183635
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733198