DocumentCode :
733272
Title :
Electro-optic effect in silicon nitride
Author :
Miller, Steven ; Lee, Yoon-Ho Daniel ; Cardenas, Jaime ; Gaeta, Alexander L. ; Lipson, Michal
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We present the first demonstration of the electro-optic effect in Si3N4 by using a multislot waveguide structure. We measure the maximum EO coefficient of 8.31±5.6fm/V, and demonstrate EO modulation at 1GHz.
Keywords :
electro-optical effects; electro-optical modulation; optical waveguides; silicon compounds; Si3N4; electro-optic coefficient; electro-optic effect; electro-optic modulation; frequency 1 GHz; multislot waveguide structure; Electric fields; Electrodes; Electrooptic effects; Electrooptical waveguides; Frequency modulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183709
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=733272
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