• DocumentCode
    733316
  • Title

    Realization of a SOI-like III-V platform based on the integration of GaAs with silicon

  • Author

    Sharma, Rajat ; Hung-Hsi Lin ; Puckett, Matthew W. ; Fainman, Yeshaiahu

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California, San Diego, La Jolla, CA, USA
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We demonstrate the integration of gallium arsenide with silicon to create a SOI-like platform capable of exploiting the optical properties of III-V materials. We fabricate nanoscale waveguides and design Bragg gratings on this new platform.
  • Keywords
    Bragg gratings; III-V semiconductors; elemental semiconductors; gallium arsenide; integrated optoelectronics; optical design techniques; optical fabrication; optical waveguides; silicon; Bragg grating design; GaAs-Si; III-V materials; SOI-like III-V platform; gallium arsenide; nanoscale waveguide fabrication; optical properties;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183753