DocumentCode :
733318
Title :
1.5 μm High density quantum dots waveguide photodetector with avalanche effect
Author :
Umezawa, T. ; Akahane, K. ; Yamamoto, N. ; Kanno, A. ; Kawanishi, T.
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol. (NICT), Koganei, Japan
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We have fabricated a waveguide photodetector using a 1.55-μm high-density InAs quantum dot absorption layer. A high responsivity (0.4 A/W) without using fiber coupling designs, and a large avalanche multiplication factor of over 10 could be successfully achieved.
Keywords :
III-V semiconductors; avalanche breakdown; indium compounds; optical fabrication; optical waveguides; photodetectors; semiconductor quantum dots; InAs; avalanche effect; avalanche multiplication factor; high density quantum dot waveguide photodetector; high-density quantum dot absorption layer; wavelength 1.5 mum; Absorption; Optical fiber communication; Optical fibers; Photodetectors; Quantum dot lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183755
Link To Document :
بازگشت