Title :
GaInAs/InP MQW light-emitting diode fabricated on wafer bonded InP/Quartz substrate
Author :
Matsumoto, Keiichi ; Takasu, Makoto ; Kanaya, Yoshinori ; Kishikawa, Junya ; Shimomura, Kazuhiko
Author_Institution :
Dept. of Eng. & Appl. Sci., Sophia Univ., Tokyo, Japan
Abstract :
GaInAs/InP multi quantum wells light-emitting diode, emitting at 1.3-μm, was fabricated by metal organic vapor phase epitaxi on wafer bonded InP/Quartz substrate. The device has been operated under continuous wave operation at room temperature.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; quantum well devices; quartz; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; wafer bonding; GaInAs-InP; InP-SiO2; MQW light-emitting diode; continuous wave operation; metal organic vapor phase epitaxy; multiquantum wells LED; room temperature; temperature 293 K to 298 K; wafer bonded InP/quartz substrate; Epitaxial growth; Epitaxial layers; III-V semiconductor materials; Indium phosphide; Light emitting diodes; Quantum well devices; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
