DocumentCode :
733399
Title :
Room-temperature lasing in GaAs nanowires embedding multi-stacked InGaAs/GaAs quantum dots
Author :
Tatebayashi, Jun ; Kako, Satoshi ; Jinfa Ho ; Ota, Yasutomo ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution :
NanoQUINE & IIS, Univ. of Tokyo, Tokyo, Japan
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We report the demonstration of room-temperature lasing in a single GaAs nanowire embedding 50-stacked In0.22Ga0.78As/GaAs quantum dots at a lasing emission energy of 1.37 eV with a threshold pump pulse fluence of 138 μm/cm2.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; nanowires; optical pumping; quantum dot lasers; In0.22Ga0.78As-GaAs; electron volt energy 1.37 eV; lasing emission energy; multistacked quantum dots; nanowires; room-temperature lasing; temperature 293 K to 298 K; threshold pump pulse fluence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183838
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=733399
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