DocumentCode :
733411
Title :
Spectral dependence of third-order nonlinear optical properties in InN
Author :
Hyeyoung Ahn ; Min-Tse Lee
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
Spectral dependence of nonlinear optical absorption cross-section (σ) near and below the bandgap (Eg) is measured for InN by using Z-scan technique. A drastic increase of σ near Eg can be understood by the band-filling model.
Keywords :
III-V semiconductors; energy gap; indium compounds; optical saturable absorption; semiconductor thin films; InN; Z-scan technique; band-filling model; bandgap; nonlinear optical absorption cross-section; spectral dependence; third-order nonlinear optical properties; Absorption; Fiber nonlinear optics; Optical films; Optical saturation; Photonic band gap; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183850
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=733411
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