DocumentCode
733462
Title
Low-temperature optimized 940 nm diode laser bars with 1.98 kW peak power at 203 K
Author
Frevert, C. ; Crump, P. ; Bugge, F. ; Knigge, S. ; Ginolas, A. ; Erbert, G.
Author_Institution
Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
Passively cooled 1-cm wide QCW diode laser bars with low-temperature optimized vertical designs reach output powers of 1.98 kW at 203 K, with conversion efficiency of 64% at 1 kW and 57% at 1.9 kW.
Keywords
III-V semiconductors; gallium arsenide; laser modes; optical design techniques; optimisation; semiconductor lasers; GaAs; conversion efficiency; efficiency 57 percent; efficiency 64 percent; low-temperature optimized diode laser bars; low-temperature optimized vertical designs; output powers; passively cooled QCW diode laser bars; peak power; power 1 kW; power 1.98 kW; quasicontinuous-wave mode; temperature 203 K; wavelength 940 nm; Bars; Current measurement; Diode lasers; Power generation; Resistance; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7183901
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