• DocumentCode
    733467
  • Title

    A direct band gap GeSn laser on Si

  • Author

    Geiger, R. ; Wirths, S. ; Buca, D. ; Sigg, H. ; von den Driesch, N. ; Ikonic, Z. ; Hartmann, J.M. ; Faist, J. ; Mantl, S. ; Grutzmacher, D.

  • Author_Institution
    Lab. for Micro- & Nanotechnol., Paul Scherrer Inst., Villigen, Switzerland
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Temperature-dependent photoluminescence spectroscopy reveals that partially strain-relaxed Ge0.87Sn0.13 exhibits a fundamental direct band gap. For such an alloy, we show lasing at ≈ 2.3 μm emission wavelength under optical pumping up to 90 K.
  • Keywords
    germanium compounds; laser beams; optical pumping; photoluminescence; semiconductor lasers; silicon; GeSn-Si; direct band gap GeSn laser on Si; emission wavelength; fundamental direct band gap; optical pumping; partially strain-relaxed Ge0.87Sn0.13; temperature 90 K; temperature-dependent photoluminescence spectroscopy; wavelength 2.3 mum; Cavity resonators; Optical pumping; Optical waveguides; Photonic band gap; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183906
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733467