DocumentCode :
733489
Title :
Influence of Al/Ge ratio on radiation-induced attenuation in nanostructured erbium-doped fibers preforms
Author :
Leon, M. ; Lancry, M. ; Ollier, N. ; Bigot, L. ; El Hamzaoui, H. ; Savelii, Inna ; Pastouret, A. ; Burov, E. ; Poumellec, B. ; Bouazaoui, M.
Author_Institution :
Inst. de Chim. Mol. et des Mater. d´Orsay, Univ. Paris Sud, Orsay, France
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We have compared the radiation resistance of various Er3+-doped fiber preforms manufactured with different technologies: Si and Al nanoparticles doped fibers, and standard MCVD fibers. All of them have been irradiated with a total gamma dose of 5.9 kGy and then studied using absorption and EPR spectroscopies.
Keywords :
aluminium; chemical vapour deposition; erbium; gamma-ray effects; germanium; nanoparticles; nanophotonics; optical fibres; paramagnetic resonance; preforms; silicon; silicon compounds; ultraviolet spectra; visible spectra; EPR spectroscopy; SiO2:Er,Al; SiO2:Er,Ge; SiO2:Er,Si; absorption spectroscopy; gamma dose; nanoparticle doped fibers; nanostructured erbium-doped fiber preforms; radiation absorbed dose 5.9 kGy; radiation resistance; radiation-induced attenuation; standard MCVD fibers; Erbium; Optical attenuators; Optical fiber amplifiers; Optical fiber communication; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183929
Link To Document :
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