DocumentCode :
733526
Title :
Visible up-conversion luminescence in (ErSc)2O3 epitaxial thin films and its suppression by photonic band-gap
Author :
Tawara, T. ; McManus, T. ; Kawakami, Y. ; Omi, H. ; Najar, A. ; Kaji, R. ; Adachi, S. ; Gotoh, H.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
Visible up-conversion luminescence induced by 1535-nm excitation in (ErSc)2O3 epitaxial layers are observed. We investigate fast up-conversion rate and propose its suppression structure by photonic band-gap for realizing higher optical gain devices on Si wafers.
Keywords :
epitaxial layers; erbium compounds; optical films; photoluminescence; photonic band gap; photonic crystals; silicon; visible spectra; (ErSc)2O3; (ErSc)2O3 epitaxial layers; (ErSc)2O3 epitaxial thin films; Si; fast up-conversion rate; higher optical gain devices; photonic band-gap; suppression structure; visible up-conversion luminescence; wavelength 1535 nm; Erbium; Luminescence; Manifolds; Optical amplifiers; Optical devices; Optical films; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183966
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=733526
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