• DocumentCode
    733526
  • Title

    Visible up-conversion luminescence in (ErSc)2O3 epitaxial thin films and its suppression by photonic band-gap

  • Author

    Tawara, T. ; McManus, T. ; Kawakami, Y. ; Omi, H. ; Najar, A. ; Kaji, R. ; Adachi, S. ; Gotoh, H.

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Visible up-conversion luminescence induced by 1535-nm excitation in (ErSc)2O3 epitaxial layers are observed. We investigate fast up-conversion rate and propose its suppression structure by photonic band-gap for realizing higher optical gain devices on Si wafers.
  • Keywords
    epitaxial layers; erbium compounds; optical films; photoluminescence; photonic band gap; photonic crystals; silicon; visible spectra; (ErSc)2O3; (ErSc)2O3 epitaxial layers; (ErSc)2O3 epitaxial thin films; Si; fast up-conversion rate; higher optical gain devices; photonic band-gap; suppression structure; visible up-conversion luminescence; wavelength 1535 nm; Erbium; Luminescence; Manifolds; Optical amplifiers; Optical devices; Optical films; Photonics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7183966
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733526