DocumentCode :
733538
Title :
3-D scanning mid-IR imaging of buried structures using extremely nondegenerate two-photon absorption in a GaN photodiode
Author :
Pattanaik, Himansu S. ; Reichert, Matthew ; Hagan, David J. ; Van Stryland, Eric W.
Author_Institution :
Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
We demonstrate a scanning 3-D IR imaging technique using extremely nondegenerate two-photon absorption in an uncooled GaN photodiode, and obtain ~2 μm depth resolution at a wavelength of ~5 μm in buried semiconductor structures.
Keywords :
III-V semiconductors; gallium compounds; infrared imaging; photodiodes; two-photon processes; 3-D scanning midIR imaging; GaN; buried semiconductor structures; extremely nondegenerate two-photon absorption; uncooled GaN photodiode; wavelength 5 mum; Absorption; Gallium nitride; Imaging; Logic gates; Photodiodes; Photonics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7183978
Link To Document :
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