DocumentCode :
733589
Title :
Frequency conversion in periodically oriented gallium nitride
Author :
Bowman, Steven R. ; Brown, Christopher G. ; Hite, Jennifer K. ; Freitas, Jaime A. ; Kub, Francis J. ; Eddy, Charles R. ; Vurgaftman, Igor ; Meyer, Jerry R. ; Leach, Jacob H. ; Udwary, Kevin
Author_Institution :
U.S. Naval Res. Lab., Washington, DC, USA
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
Broadband transparency, high thermal conductivity, and strong nonlinearity make gallium nitride a promising material for high power frequency conversion. We have fabricated and tested periodically oriented gallium nitride (PO-GaN) devices for quasi-phase matched (QPM) frequency conversion.
Keywords :
III-V semiconductors; gallium compounds; optical elements; optical frequency conversion; optical phase matching; thermal conductivity; wide band gap semiconductors; GaN; broadband transparency; high power frequency conversion; periodically oriented gallium nitride devices; quasiphase matched frequency conversion; thermal conductivity; Frequency conversion; Gallium nitride; Nonlinear optical devices; Optical device fabrication; Optical harmonic generation; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7184030
Link To Document :
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