DocumentCode :
733620
Title :
The optical absorption in zincblende and wurtzite GaP nanowire polytypes
Author :
Aghaeipour, Mahtab ; Anttu, Nicklas ; Nylund, Gustav ; Samuelson, Lars ; Lehmann, Sebastian ; Pistol, Mats-Erik
Author_Institution :
Div. of Solid State Phys., Lund Univ., Lund, Sweden
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
The geometry dependence of the absorption in semiconductor nanowires is of large interest currently, and especially the diameter-dependent absorption resonances are promising for tunable detectors. Here, we show that these resonances for both wurtzite and zincblende GaP nanowires can be tuned down to λ ~ 330 nm by decreasing the diameter to 35 nm. This stop of the shifting at λ ~ 330 nm indicates that both polytypes show a critical point in the refractive index in this region of the ultra violet regime. This similarity of the resonant response in both polytypes of GaP nanowires is in strong contrast to the case of InP and InAs nanowires.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light absorption; nanophotonics; nanowires; refractive index; ultraviolet spectra; GaP; InAs; InAs nanowires; InP; InP nanowires; critical point; diameter-dependent absorption resonances; optical absorption; refractive index; semiconductor nanowires; size 35 nm; tunable detector; ultraviolet regime; wavelength 330 nm; wurtzite GaP nanowire polytypes; zincblende GaP nanowire polytypes; Absorption; Arrays; III-V semiconductor materials; Indium phosphide; Optical refraction; Optical variables control; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7184061
Link To Document :
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