DocumentCode
733722
Title
High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime
Author
Yi Xuan ; Yang Liu ; Xiaoxiao Xue ; Pei-Hsun Wang ; Jian Wang ; Ben Niu ; Kyunghun Han ; Min Teng ; Leaird, Daniel E. ; Weiner, Andrew M. ; Minghao Qi
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
SiN micro-resonators with a cross section of 3×0.6 μm2 and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.
Keywords
Q-factor; micro-optics; optical dispersion; optical frequency combs; optical resonators; silicon compounds; FSR; SiN; free spectral range; frequency 25 GHz; frequency comb onset power; high-Q silicon nitride microresonator; low power frequency comb initiation; normal dispersion regime; power 5.6 mW; Microcavities; Optical films; Optical waveguides; Q-factor; Resonant frequency; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7184164
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