DocumentCode :
733722
Title :
High-Q silicon nitride microresonator for low power frequency comb initiation at normal dispersion regime
Author :
Yi Xuan ; Yang Liu ; Xiaoxiao Xue ; Pei-Hsun Wang ; Jian Wang ; Ben Niu ; Kyunghun Han ; Min Teng ; Leaird, Daniel E. ; Weiner, Andrew M. ; Minghao Qi
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fYear :
2015
fDate :
10-15 May 2015
Firstpage :
1
Lastpage :
2
Abstract :
SiN micro-resonators with a cross section of 3×0.6 μm2 and an FSR of 25 GHz were demonstrated with intrinsic Qs up to 17 million, showing frequency comb onset power as low as 5.6 mW.
Keywords :
Q-factor; micro-optics; optical dispersion; optical frequency combs; optical resonators; silicon compounds; FSR; SiN; free spectral range; frequency 25 GHz; frequency comb onset power; high-Q silicon nitride microresonator; low power frequency comb initiation; normal dispersion regime; power 5.6 mW; Microcavities; Optical films; Optical waveguides; Q-factor; Resonant frequency; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
7184164
Link To Document :
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