DocumentCode
733804
Title
Terahertz response of long-lived photoexcited electrons in silicon observed using single-shot terahertz spectroscopy
Author
Katayama, Ikufumi ; Masuda, Kaisei ; Horiuchi, Kohei ; Minami, Yasuo ; Takeda, Jun
Author_Institution
Dept. of Phys., Yokohama Nat. Univ., Yokohama, Japan
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We observed the Drude response of photoexcited electrons in high resistivity silicon by using single-shot terahertz spectroscopy. In contrast to conventional optical-pump and terahertz-probe spectroscopy, this technique can significantly reduce the measurement time and repetition rate of pump pulses. As a result, the dynamics of long-lived photoexcited carriers in silicon is clearly observed without a pileup of the carriers.
Keywords
elemental semiconductors; optical pumping; silicon; terahertz wave spectra; Drude response; Si; high resistivity silicon; long-lived photoexcited carrier dynamics; long-lived photoexcited electrons; measurement time; pump pulses; repetition rate; single-shot terahertz spectroscopy; terahertz response; Delays; Mirrors; Optical pulses; Optical pumping; Silicon; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7184246
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