DocumentCode
733812
Title
On-chip modulation in the mid-infrared with silicon-on-lithium-niobate photonics
Author
Chiles, Jeff ; Fathpour, Sasan
Author_Institution
Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
Mid-infrared (3.39 μm) optical modulators are demonstrated for the first time on the silicon-on-lithium-niobate platform, with a Vπ·L of 26 V·cm, extinction ratio of 8 dB, and on-chip insertion losses of 3.3 dB.
Keywords
integrated optoelectronics; lithium compounds; optical losses; optical modulation; silicon-on-insulator; Si-LiNbO3; extinction ratio; mid-infrared optical modulators; on-chip insertion losses; on-chip modulation; silicon-on-lithium-niobate photonics; wavelength 3.39 mum; Electrooptical waveguides; Optical device fabrication; Optical fibers; Optical modulation; Photonics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7184254
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