Title :
Microscopic analysis of quantum-confined stark effect of group IV quantum wells for mid-infrared Si-based electroabsorption modulators
Author :
Fujisawa, Takeshi ; Saitoh, Kunimasa
Author_Institution :
Grad. Sch. of Inf. Sci. & Technol., Hokkaido Univ., Sapporo, Japan
Abstract :
Quantum-confined Stark effect of Ge(Sn)/SiGe(Sn) quantum wells (QWs) is analyzed by many-body theory. Calculated absorption spectra of Ge/SiGe-QWs are in good agreement with the experiment. Also, the effect of Sn-incorporation is investigated for mid-infrared applications.
Keywords :
Ge-Si alloys; electro-optical modulation; electroabsorption; elemental semiconductors; germanium; infrared spectra; quantum confined Stark effect; semiconductor materials; semiconductor quantum wells; tin; Ge:Sn-SiGe:Sn; Sn-incorporation; absorption spectra; group IV quantum wells; many-body theory; microscopic analysis; mid-infrared Si-based electroabsorption modulators; mid-infrared applications; quantum-confined Stark effect; Absorption; Electric fields; Optical buffering; Photonics; Semiconductor device measurement; Silicon; Silicon germanium;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
