DocumentCode :
73383
Title :
SPICE-Based Performance Analysis of Trigate Silicon Nanowire CMOS Circuits
Author :
Tanaka, C. ; Saitoh, Masatoshi ; Ota, Kaoru ; Uchida, Kazunori ; Numata, T.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Volume :
60
Issue :
4
fYear :
2013
fDate :
Apr-13
Firstpage :
1451
Lastpage :
1456
Abstract :
An ultralow-voltage performance is investigated in nanowire transistors (NW Tr.) CMOS circuits. SPICE model parameters of BSIM4 are extracted from measurement data of NW Tr. fabricated on 300-mm SOI wafer. The delay time and the power consumption are examined between nanowire and bulk-Si CMOS circuits. The operation voltage of a nanowire CMOS inverter with an ideal subthreshold slope can be reduced by 300 mV from that of the bulk-Si CMOS inverter. NW-Tr.-based circuits under voltage scaling have immunity from supplying voltage fluctuation and suppression of operation delay variation.
Keywords :
CMOS integrated circuits; SPICE; elemental semiconductors; invertors; low-power electronics; nanowires; silicon; silicon-on-insulator; BSIM4; CMOS circuits; SOI wafer; SPICE based performance analysis; delay time; nanowire CMOS inverter; nanowire transistors; power consumption; size 300 nm; subthreshold slope; trigate silicon nanowire; ultralow-voltage performance; voltage 300 mV; voltage fluctuation; voltage scaling; CMOS integrated circuits; Delays; Inverters; Logic gates; Power demand; SPICE; Semiconductor device modeling; CMOS circuit; SPICE parameter; low power; nanowire transistor; parameter extraction;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2013.2247607
Filename :
6471797
Link To Document :
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