Title :
Integrated photonic devices with single quantum dots
Author :
Fox, A.M. ; Clarke, E. ; Coles, R.J. ; Dixon, J.E. ; Luxmoore, I.J. ; Hugues, M. ; Makhonin, M.N. ; O´Hara, J. ; Prtljaga, N. ; Ramsay, A.J. ; Royall, B. ; Wasley, N.A. ; Skolnick, M.S.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield, UK
Abstract :
The integration of InAs quantum dots as on-chip single-photon sources in GaAs photonic circuits is reviewed. A Hanbury Brown-Twiss effect is demonstrated using a monolithic directional coupler, together with coherent emission under resonant excitation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical directional couplers; semiconductor quantum dots; GaAs; GaAs photonic circuits; Hanbury Brown-Twiss effect; InAs; InAs quantum dot integration; coherent emission; integrated photonic devices; monolithic directional coupler; on-chip single-photon sources; resonant excitation; single quantum dots; Gallium arsenide; Indium gallium arsenide; Optical interferometry; Optical waveguides; Photonics; Quantum dots; System-on-chip;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
