Title :
Electrically pumped 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si substrate lasing up to 111°C
Author :
Siming Chen ; Mingchu Tang ; Qi Jiang ; Jiang Wu ; Dorogan, Vitaliy G. ; Benamara, Mourad ; Mazur, Yuriy I. ; Salamo, Gregory J. ; Seeds, Alwyn ; Huiyun Liu
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Abstract :
A silicon-based InAs/GaAs quantum dot laser that lases up to 111°C, with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature, has been achieved by using InAlAs/GaAs strained-layer superlattices as dislocation filter layers.
Keywords :
III-V semiconductors; current density; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; optical filters; quantum dot lasers; semiconductor superlattices; silicon; InAs-GaAs; Si; Si substrate; dislocation filter layers; electrically pumped quantum dot laser; output power; room temperature; strained-layer superlattices; temperature 293 K to 298 K; threshold current density; wavelength 1.3 mum; Current density; Gallium arsenide; Indium compounds; Lasers; Power generation; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
