• DocumentCode
    733903
  • Title

    Electrically pumped 1.3-μm InAs/GaAs quantum dot laser monolithically grown on Si substrate lasing up to 111°C

  • Author

    Siming Chen ; Mingchu Tang ; Qi Jiang ; Jiang Wu ; Dorogan, Vitaliy G. ; Benamara, Mourad ; Mazur, Yuriy I. ; Salamo, Gregory J. ; Seeds, Alwyn ; Huiyun Liu

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A silicon-based InAs/GaAs quantum dot laser that lases up to 111°C, with a threshold current density of 200 A/cm2 and an output power exceeding 100 mW at room temperature, has been achieved by using InAlAs/GaAs strained-layer superlattices as dislocation filter layers.
  • Keywords
    III-V semiconductors; current density; elemental semiconductors; gallium arsenide; indium compounds; integrated optics; optical filters; quantum dot lasers; semiconductor superlattices; silicon; InAs-GaAs; Si; Si substrate; dislocation filter layers; electrically pumped quantum dot laser; output power; room temperature; strained-layer superlattices; temperature 293 K to 298 K; threshold current density; wavelength 1.3 mum; Current density; Gallium arsenide; Indium compounds; Lasers; Power generation; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2015 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    7184346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=733903