Title :
1.3-μm InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe bonding
Author :
Yuan-Hsuan Jhang ; Tanabe, Katsuaki ; Iwamoto, Satoshi ; Arakawa, Yasuhiko
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan
Abstract :
We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe wafer bonding technology. Our III-V-on-Si bonded laser exhibits room-temperature lasing at 1.3 μm with current injection through the bonding metal stripe.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum dot lasers; silicon-on-insulator; wafer bonding; III-V-on-Si bonded laser; InAs-GaAs; Si; bonding metal stripe; current injection; metal-stripe wafer bonding technology; quantum dot lasers; room-temperature lasing; silicon-on-insulator substrates; temperature 293 K to 298 K; wavelength 1.3 mum; Bonding; Gallium arsenide; Lasers; Metals; Silicon; Substrates; Threshold current;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location :
San Jose, CA
