DocumentCode
733983
Title
III-V nanopillar phototransistor directly grown on silicon
Author
Bhattacharya, Indrasen ; Wai Son Ko ; Fanglu Lu ; Gerke, Stephen ; Chang-Hasnain, Connie
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Grad. Program in Appl. Sci. & Technol., Univ. of California at Berkeley, Berkeley, CA, USA
fYear
2015
fDate
10-15 May 2015
Firstpage
1
Lastpage
2
Abstract
We demonstrate InP nanopillar bipolar junction phototransistors monolithically integrated on a Silicon substrate. With a responsivity of 4 A/W and bandwidth of 7.5 GHz, these receivers indicate a route towards efficient on-chip optical interconnects.
Keywords
III-V semiconductors; bipolar transistors; indium compounds; integrated optoelectronics; nanoelectronics; nanostructured materials; optical interconnections; optical receivers; phototransistors; III-V nanopillar bipolar junction phototransistors; InP; Si; on-chip optical interconnects; receivers; silicon substrate; Capacitance; High-speed optical techniques; MOCVD; Nanoscale devices; Receivers; Silicon; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2015 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
7184427
Link To Document