• DocumentCode
    734022
  • Title

    Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation)

  • Author

    Vasilenko, Maxim A. ; Shwartz, Nataliya L.

  • Author_Institution
    Novosibirsk State Tech. Univ., Novosibirsk, Russia
  • fYear
    2015
  • fDate
    June 29 2015-July 3 2015
  • Firstpage
    16
  • Lastpage
    19
  • Abstract
    A kinetic lattice Monte Carlo model of local droplet etching of A3B5 semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.
  • Keywords
    III-V semiconductors; Monte Carlo methods; drops; epitaxial growth; etching; gallium arsenide; liquid-vapour transformations; semiconductor technology; solid-liquid transformations; A3B5 semiconductors; GaAs; Monte Carlo simulation; droplet epitaxy process; droplet etching; kinetic lattice Monte Carlo model; surface etching; vapor-liquid-solid mechanism; Etching; Gallium; Gallium arsenide; Liquids; Semiconductor process modeling; Substrates; GaAs; Monte Carlo; droplet epitaxy; etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
  • Conference_Location
    Erlagol
  • ISSN
    2325-4173
  • Print_ISBN
    978-1-4673-6718-9
  • Type

    conf

  • DOI
    10.1109/EDM.2015.7184477
  • Filename
    7184477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=734022