Title :
Analysis of GaAs surface etching during droplet epitaxy process (Monte Carlo simulation)
Author :
Vasilenko, Maxim A. ; Shwartz, Nataliya L.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk, Russia
fDate :
June 29 2015-July 3 2015
Abstract :
A kinetic lattice Monte Carlo model of local droplet etching of A3B5 semiconductors is suggested. The model is based on vapor-liquid-solid mechanism. Using this model examination of GaAs substrate etching by gallium drops was carried out. Dependencies of pit depth on temperature and initial drop diameter were obtained.
Keywords :
III-V semiconductors; Monte Carlo methods; drops; epitaxial growth; etching; gallium arsenide; liquid-vapour transformations; semiconductor technology; solid-liquid transformations; A3B5 semiconductors; GaAs; Monte Carlo simulation; droplet epitaxy process; droplet etching; kinetic lattice Monte Carlo model; surface etching; vapor-liquid-solid mechanism; Etching; Gallium; Gallium arsenide; Liquids; Semiconductor process modeling; Substrates; GaAs; Monte Carlo; droplet epitaxy; etching;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184477
