Thermoactivated particularities of PbSnTe:In films conductivity

Author

Akimov, Aleksey N. ; Epov, Vladimir S. ; Klimov, Alexander E. ; Lunegov, Valentin A. ; Shumsky, Vladimir N.

Author_Institution

Rzhanov Inst. of Semicond. Phys., Novosibirsk, Russia

fYear

2015

fDate

June 29 2015-July 3 2015

Firstpage

49

Lastpage

52

Abstract

The features of the photocurrent in structures based on PbSnTe:In epitaxial films caused by rapid heating in the temperature range from T = 4.2K to T> 30K for different rates of the temperature change and different initial conditions of illumination were analyzed. It has been shown that the temperature dependences of the current are different for different illumination conditions that can be due to a complicated energy spectrum of traps in PbSnTe: In.

Keywords

IV-VI semiconductors; heat treatment; indium; lead compounds; photoconductivity; photoemission; semiconductor epitaxial layers; thermally stimulated currents; tin compounds; PbSnTe:In; energy spectra; epitaxial films; film conductivity; photocurrent; rapid heating; temperature dependence; thermally stimulated currents; thermoactivated particularities; Films; Heating; Light emitting diodes; Lighting; Temperature dependence; Temperature measurement; PbSnTe:In; localized states; thermally stimulated currents;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on

Conference_Location

Erlagol

ISSN

2325-4173

Print_ISBN

978-1-4673-6718-9

Type

conf

DOI

10.1109/EDM.2015.7184485

Filename

7184485