TCAD — Simulation of the complementary bipolar pair of transistors

Author

Hrapov, Mikhail O. ; Gridchin, Victor A. ; Kalinin, Sergey V.

Author_Institution

Novosibirsk State Tech. Univ., Novosibirsk, Russia

fYear

2015

fDate

June 29 2015-July 3 2015

Firstpage

79

Lastpage

82

Abstract

In this paper we consider the numerical simulation TCAD Sentaurus of the vertical NPN and PNP transistors fabricated on complementary bipolar technology with a P-epitaxial layer. As a result, technological parameters associated with the buried and epitaxial layers have been defined. These parameters have provided the required voltage value of collector-emitter breakdown. The comparison of the transistor output characteristics with the experimental data has showed the adequate accuracy of simulation for practical use.

Keywords

bipolar transistors; buried layers; electric breakdown; numerical analysis; semiconductor epitaxial layers; technology CAD (electronics); NPN transistors; P-epitaxial layer; PNP transistors; TCAD Sentaurus; buried layers; collector-emitter breakdown; complementary bipolar pair transistors; complementary bipolar technology; epitaxial layers; voltage value; Bipolar transistors; Doping profiles; Nanoscale devices; Numerical models; Semiconductor process modeling; Transistors; P-epitaxy; TCAD Sentaurus; breakdown voltage of the collector-emitter; complementary NPN and PNP transistors; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on

Conference_Location

Erlagol

ISSN

2325-4173

Print_ISBN

978-1-4673-6718-9

Type

conf

DOI

10.1109/EDM.2015.7184493

Filename

7184493