Title :
Silicon solar cells with vertical p-n junctions for hybrid solar cells
Author :
Malyutina-Bronskaya, Viktoria V. ; Zalesskii, Valeryi B. ; Konoiko, Aleksey I. ; Malyshev, Victor S.
Author_Institution :
B.I. Stepanov Inst. of Phys., Minsk, Belarus
fDate :
June 29 2015-July 3 2015
Abstract :
Construction and method of formation of silicon solar cells with vertical p-n junction has been presented. The solar cell should contain a groove within the active light-absorbing area, in order to reduce the reflection of solar radiation. Multiplied module consists of the four elements with different topology. This construction could be transparent in the long-wavelength part of the spectrum beyond the edge of the fundamental absorption band.
Keywords :
elemental semiconductors; light absorption; p-n junctions; silicon; solar cells; solar radiation; sunlight; Si; absorption band; hybrid solar cells; silicon solar cells; solar radiation; vertical p-n junctions; Absorption; Coatings; P-n junctions; Photovoltaic cells; Radiation effects; Silicon; Substrates; Silicon solar cells; hybrid solar cell; multiplied module; vertical p-n junction;
Conference_Titel :
Micro/Nanotechnologies and Electron Devices (EDM), 2015 16th International Conference of Young Specialists on
Conference_Location :
Erlagol
Print_ISBN :
978-1-4673-6718-9
DOI :
10.1109/EDM.2015.7184495
