DocumentCode :
734249
Title :
Estimation of remaining life using embedded SRAM for wearout parameter extraction
Author :
Woongrae Kim ; Chang-Chih Chen ; Taizhi Liu ; Soonyoung Cha ; Milor, Linda
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2015
fDate :
18-19 June 2015
Firstpage :
243
Lastpage :
248
Abstract :
Safety critical systems need methods for chips to monitor their health in the field. This paper proposes to use the embedded SRAM as a monitor of system health. The bit failures are tracked and the cause of each bit failure is diagnosed with on-chip built-in self test (BIST). The wearout model parameters are estimated from the diagnosis results and combined with system wearout simulation data to estimate the remaining lifetime of a system.
Keywords :
SRAM chips; built-in self test; integrated circuit testing; life testing; semiconductor device reliability; wear testing; BIST; embedded SRAM; on-chip built-in self test; remaining life estimation; system health monitor; wearout parameter extraction; Circuit faults; Electric breakdown; Electromigration; Logic gates; SRAM cells; Stress; Backend dielectric breakdown; Bias temperature instability; Built-In Self-Test (BIST); Electromigration; Gate oxide breakdown; Lifetime; Stress-induced voiding; Wearout parameter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advances in Sensors and Interfaces (IWASI), 2015 6th IEEE International Workshop on
Conference_Location :
Gallipoli
Type :
conf
DOI :
10.1109/IWASI.2015.7184952
Filename :
7184952
Link To Document :
بازگشت