Title :
Characterization of Nb-doped MgZnO films grown by a radio-frequency magnetron sputtering system
Author :
Kuang-Po Hsueh ; Wen-Yen Lin ; Hsien-Chin Chiu ; Hsiang-Chun Wang ; Jinn-Kong Sheu ; Yu-Hsiang Yeh
Author_Institution :
Dept. of Electron. Eng., Vanung Univ., Chung-Li, Taiwan
Abstract :
Niobium-doped MgxZn1-xO (Nb-MZO) mixed oxide films with high transmittance were successfully deposited on sapphire substrates by a radio-frequency (RF) magnetron sputtering using a 4-in ZnO/MgO/NbOx (75/20/5 wt %) target. In this study, the films were analyzed through a Hall test, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and transmittance. The XRD results showed MgO2 (002) wurtzite peak as well as an MgxZn1-xO (111)-cubic peak. The absorption edges of these Nb-MZO films were located in the UV region, implying that the MgO content of the Nb-MZO layer increased the bandgaps. The XPS spectra of Nb-MZO films were also used to analyze the composition of the as-grown and annealed Nb-MZO films. These results indicate that the Nb-MZO films are ideal for use as transparent contact layers.
Keywords :
Hall effect; II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; energy gap; magnesium compounds; niobium; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; wide band gap semiconductors; zinc compounds; Al2O3; Hall test; MgxZn1-xO:Nb; MgO content; Nb-doped MgZnO films; UV region; X-ray diffraction; X-ray photoelectron spectroscopy; XPS spectra; XRD; absorption edges; bandgaps; niobium-doped mixed oxide films; radiofrequency magnetron sputtering system; sapphire substrates; size 4 in; transparent contact layers; Annealing; Films; II-VI semiconductor materials; Niobium; Sputtering; Zinc oxide; MgO; NbOx; X-ray diffraction; ZnO; transparent conductive oxide;
Conference_Titel :
Broadband and Photonics Conference (IBP), 2015 IEEE International
Conference_Location :
Bali
Print_ISBN :
978-1-4799-8474-9
DOI :
10.1109/IBP.2015.7230765
