Title :
A High-Speed Energy-Efficient Segmented Prequantize and Bypass DAC for SAR ADCs
Author :
Xiaoyang Wang ; Xiong Zhou ; Qiang Li
Author_Institution :
Sch. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This brief presents an energy-efficient high-speed digital-to-analog converter structure that is implemented in a 10-bit 150-MS/s successive approximation register (SAR) analog-to-digital converter (ADC). To reduce energy consumption and improve ADC linearity, a segmented prequantize and bypass architecture is proposed to avoid unnecessary switching of high-weight capacitors based on the results of prequantization. To eliminate possible conversion error caused by parasitic capacitance and provide redundancy, two extra capacitors are inserted. A prototype 10-bit 150-MS/s SAR ADC with the proposed architecture is implemented in a standard 65-nm CMOS technology. According to the simulation, the ADC achieves a spurious-free dynamic range of 83.64 dB and an effective number of bits of 9.52 bits with only 1.20 mW power consumption at a 1.2-V supply, resulting in a figure of merit of 10.9 fJ/conversion-step.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; flip-flops; high-speed integrated circuits; ADC linearity; CMOS technology; SAR ADC; bypass DAC; bypass architecture; conversion error; digital-to-analog converter structure; energy consumption; high-speed energy-efficient segmented prequantize DAC; high-weight capacitors; parasitic capacitance; power 1.2 mW; segmented prequantize architecture; size 65 nm; successive approximation register analog-to-digital converter; voltage 1.2 V; word length 10 bit; Arrays; CMOS integrated circuits; Capacitors; Linearity; Parasitic capacitance; Power demand; Switches; Analog-to-digital converter (ADC); energy-efficient; successive approximation register (SAR); successive approximation register (SAR).;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2015.2435432