Title :
7.4μW Ultra-high slew-rate pseudo single-stage amplifier driving 0.1-to-15nF capacitive load with >69° phase margin
Author :
Sung-Wan Hong ; Gyu-Hyeong Cho
Author_Institution :
DMC R&D Center, Samsung Electron., Suwon, South Korea
Abstract :
To achieve ultra-high slew-rate with stable operation under wide capacitive load range, pseudo single-stage amplifier is proposed in this paper. The proposed amplifier achieves widest capacitive load drivability (x150). Also, this work achieves at least 151 times larger FOM for slew-rate compared to state-of-the-art works. This chip was fabricated using a 0.18 μm CMOS process with area of 0.0021 mm2.
Keywords :
CMOS integrated circuits; amplifiers; CMOS process; capacitive load; size 0.18 mum; ultra-high slew-rate pseudo single-stage amplifier; CMOS process; Capacitors; Feedback loop; Logic gates; Mirrors; Resistance; Transient analysis;
Conference_Titel :
VLSI Circuits (VLSI Circuits), 2015 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-86348-502-0
DOI :
10.1109/VLSIC.2015.7231297