Title :
410-GHz CMOS imager using a 4th sub-harmonic mixer with effective NEP of 0.3 fW/Hz0.5 at 1-kHz noise bandwidth
Author :
Wooyeol Choi ; Ahmad, Zeshan ; Jha, Amit ; Ja-Yol Lee ; Insoo Kim ; Kenneth, K.O.
Author_Institution :
Texas Analog Center of Excellence, Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
A 410-GHz imager consisting of a 4th sub-harmonic mixer formed with an anti-parallel diode-connected NMOS transistor pair, and an on-chip antenna with 4.4-dB simulated gain is demonstrated in 65-nm CMOS. At -1.6-dBm power delivered to the LO input bond pad, the imager achieves 16.8-dB voltage conversion loss and 34.1-dB DSB noise figure. When the noise bandwidth is 1 kHz, sensitivity is -110 dBm, which is 30 dB better than the previously reported CMOS imagers operating near or above 300 GHz. The corresponding effective noise equivalent power is 0.3 fW/Hz0.5.
Keywords :
CMOS image sensors; MOSFET; mixers (circuits); submillimetre wave imaging; 4th sub-harmonic mixer; CMOS imager; anti-parallel diode-connected NMOS transistor pair; frequency 410 GHz; gain 4.4 dB; loss 16.8 dB; noise figure 34.1 dB; on-chip antenna; size 65 nm; voltage conversion loss; Antenna measurements; CMOS integrated circuits; Gain; Mixers; Noise; Noise figure; Sensitivity; CMOS; imager; sub-harmonic mixer; submillimeter-wave;
Conference_Titel :
VLSI Circuits (VLSI Circuits), 2015 Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-86348-502-0
DOI :
10.1109/VLSIC.2015.7231299
