The progresses of MRAM as a memory to save energy consumption and its potential for further reduction

Critical switching current, Isw, of STT (Spin Transfer Torque)-MRAM has been reduced by several orders with perpendicular MTJ and the state-of-the-art write charge, Qw, becomes the order of 100–150fC. With the small Qw, MRAM starts to save energy consumption by 70–80% compared with a conventional memory system. Analysis of the write pulse-width dependence of Iw revealed a further potential of perpendicular MTJ to reduce Iw and Qw. STT-MRAM is thought to achieve a further reduction of energy consumption.