• DocumentCode
    735332
  • Title

    Challenges for high-density 16Gb ReRAM with 27nm technology

  • Author

    Sills, Scott ; Yasuda, Shuichiro ; Calderoni, Alessandro ; Cardon, Christopher ; Strand, Jonathan ; Aratani, Katsuhisa ; Ramaswamy, Nirmal

  • Author_Institution
    Micron Technology Inc., Boise, Idaho, USA
  • fYear
    2015
  • fDate
    17-19 June 2015
  • Abstract
    Enabling a high-density ReRAM product requires: developing a cell that meets a stringent bit error rate, BER, at low program current, integrating the cell without material damage, and providing a high-drive selector at scaled nodes. We discuss ReRAM performance under these constraints and present a 16Gb, 27nm ReRAM capable of 105 cycles with BER < 7×10−5.
  • Keywords
    Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Circuits (VLSI Circuits), 2015 Symposium on
  • Conference_Location
    Kyoto, Japan
  • Print_ISBN
    978-4-86348-502-0
  • Type

    conf

  • DOI
    10.1109/VLSIC.2015.7231366
  • Filename
    7231366
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=735332