DocumentCode
735334
Title
Reliability enhancement of 1Xnm TLC for cold flash and millennium memories
Author
Yamazaki, Senju ; Tanakamaru, Shuhei ; Suzuki, Sakuya ; Iwasaki, Tomoko Ogura ; Hachiya, Shogo ; Takeuchi, Ken
Author_Institution
Chuo University, Tokyo, Japan
fYear
2015
fDate
17-19 June 2015
Abstract
Endurance and retention are measured in 1Xnm Triple Level Cell (TLC) NAND and the flexible nLC scheme (flex-nLC) is proposed to improve reliability. This method enables the use of lowest-cost TLC NAND as is, in long term storage applications such as cold flash and digital archive: millennium memory, which have 20 and 1000 years retention, respectively.
Keywords
Bit error rate; Encoding; Flash memories; Measurement uncertainty; Reliability; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Circuits (VLSI Circuits), 2015 Symposium on
Conference_Location
Kyoto, Japan
Print_ISBN
978-4-86348-502-0
Type
conf
DOI
10.1109/VLSIC.2015.7231369
Filename
7231369
Link To Document