Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application

Author

Hayakawa, Y. ; Himeno, A. ; Yasuhara, R. ; Boullart, W. ; Vecchio, E. ; Vandeweyer, T. ; Witters, T. ; Crotti, D. ; Jurczak, M. ; Fujii, S. ; Ito, S. ; Kawashima, Y. ; Ikeda, Y. ; Kawahara, A. ; Kawai, K. ; Wei, Z. ; Muraoka, S. ; Shimakawa, K. ; Mikawa,

Author_Institution

Panasonic Corporation, 1 Kotari-yakemachi, Nagaokakyo, Kyoto, 617-8520, Japan

fYear

2015

fDate

17-19 June 2015

Abstract

For 28-nm embedded application, we have proposed a TaOx-based ReRAM with precise filament positioning and high thermal stability. The cell was realized using several newly-developed process technologies and cell structures: low-damage etching, cell side oxidation and encapsulated cell structure. As a result, we succeeded for the first time in forming a filament at the cell center. In addition, we confirmed the feasibility of 20-nm cell size. Excellent reliability was achieved in 2-Mbit 40-nm ReRAM: 100k cycles and 10 years´ retention at 85°C was demonstrated.

Keywords

Arrays; Degradation; Etching; Films; Oxidation; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits (VLSI Circuits), 2015 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

978-4-86348-502-0

Type

conf

DOI

10.1109/VLSIC.2015.7231381

Filename

7231381

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=735344