• DocumentCode
    735977
  • Title

    Effects of geometric parameters and limits of application of microelectronic capacitive pressure sensors

  • Author

    Bouguima, S. ; Benmoussa, N.

  • Author_Institution
    Unity of Res. Mater. & Renewable Energies, Univ. Abou-Bakr Belkaid, Tlemcen, Algeria
  • fYear
    2015
  • fDate
    25-27 May 2015
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    The static response of microelectronic capacitive pressure sensors with a fine silicon rectangular membrane or square membrane is studied in the low distortion limit. The response represented by the variation of the capacity with the pressure, presents two parts: a nearly linear part corresponding to values of PN lower than 0,6 (unity) and second highly non linear part for PN higher than 0,6(unity). To improve the linearity, we studied sensors with fixed armatures of different geometries. We show that reduction of the surface of the fixed armature involves a loss of sensitivity but a gain in linearity. On the other hand the extension of the open part of this armature increases the linearity but decreases considerably the sensitivity.
  • Keywords
    capacitive sensors; elemental semiconductors; membranes; microsensors; pressure sensors; silicon; Si; fine silicon rectangular membrane; fixed armature; geometric parameters; low distortion limit; microelectronic capacitive pressure sensors; square membrane; static response; Capacitive sensors; Linearity; Microelectronics; Sensitivity; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Control, Engineering & Information Technology (CEIT), 2015 3rd International Conference on
  • Conference_Location
    Tlemcen
  • Type

    conf

  • DOI
    10.1109/CEIT.2015.7233134
  • Filename
    7233134