Preparation and characterization of titanium dioxide thin film for field-effect transistor biosensor application

This paper presents the method of preparation and characterization of titanium dioxide (TiO2) thin film before deposition on the channel of field-effect transistor (FET) biosensor devices. The TiO2 is prepared using sol-gel technique and is deposited onto the silicon dioxide (SiO2) surface using spin coater. Three different numbers of coating layers (5, 7, and 9 coating layer) of TiO2 are deposited on three SiO2 layer grown on top of Si substrate for investigation. The samples are baked and annealed before being characterized electrically and morphologically. All these results give a helpful indication for the deposition process of the TiO2 thin film as the FET biosensor device on the silicon-on-insulator (SOI) wafer.