A high reliable design of memristor-based multilevel memory

Memristor has drawn significant attention in various logic and non-volatile memory applications. In particular, memristor-based resistive random access memory(RRAM) offers high density and low switching power consumption, which are essentially important for multilevel memory. In this paper, a memory cell, which is with two anti-parallel memristors and two transistors (2T2M), is proposed to achieve memristor-based 3-bit storage while removing the use of reference resistors and reducing the number of comparators, thus enabling ultra-dense non-volatile memristor memory. Via designing appropriate parameters, this method can also be available for n-bit memory with nonlinear characteristics of memristors.