An Improved Cascade-Based Noise Deembedding Method for On-Wafer Noise Parameter Measurements

In this letter, a noise deembedding method is presented to improve accuracy of on-wafer noise measurements of metal-oxide-semiconductor field-effect transistors. This method further removes parasitic effects of the forward coupling and the dangling leg with transverse magnetic mode considered, which is different from the transverse electromagnetic mode of input/output interconnects. Compared with the conventional scalable noise deembedding methods, this modified method can remove these parasitic noise effects and then make the intrinsic parameters of a device more accurate for noise characterization. The presented method demonstrates better deembedded noise performance especially for 10.4% reduction of deembedded minimum noise figure from 1 to 18 GHz.